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PD - 95254 IRF7104PBF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET(R) Power MOSFET S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.250 ID = -2.3A 3 6 4 5 Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -2.3 -1.8 -10 2.0 0.016 12 -3.0 -55 to + 150 Units A W W/C V V/nS C Thermal Resistance Ratings RJA Maximum Junction-to-Ambient Parameter Min. Typ. Max. 62.5 Units C/W www.irf.com 1 09/21/04 IRF7104PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) V GS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. -20 -1.0 Typ. Max. Units Conditions V VGS = 0V, ID = -250A -0.015 V/C Reference to 25C, ID = -1mA 0.19 0.25 VGS = -10V, I D = -1.0A 0.30 0.40 VGS = -4.5V, ID = -0.50A -3.0 V VDS = VGS, ID = -250A 2.5 S VDS = -15V, ID = -2.3A -2.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 55 C -100 VGS = -12V nA 100 VGS = 12V 9.3 25 ID = -2.3A 1.6 nC VDS = -10V 3.0 VGS = -10V 12 40 VDD = -10V 16 40 ID = -1.0A ns 42 90 RG = 6.0 30 50 RD = 10 4.0 6.0 290 210 67 nH pF D Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -15V = 1.0MHz G S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol -2.0 showing the A G integral reverse -9.2 p-n junction diode. S -1.2 V TJ = 25C, IS = -1.25A, VGS = 0V 69 100 ns TJ = 25C, IF = -1.25A 90 140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. ISD -2.3A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. 2 www.irf.com IRF7104PBF -ID , Drain-to-Source Current ( A ) -ID , Drain-to-Source Current ( A ) -VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics -VGS , Gate-to-Source Voltage ( V ) RDS (on) , Drain-to-Source On Resistance ( Normalized) -ID , Drain-to-Source Current ( A ) TJ , Junction Temperature ( C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7104PBF -VGS , Gate-to-Source Voltage ( V ) C , Capacitance ( pF ) SEE FIGURE 12 -VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -ISD , Reverse Drain Current ( A ) -ID , Drain Current ( A ) -VSD , Source-to-Drain Voltage ( V ) -VDS , Drain-to-Source Voltage ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7104PBF V DS V GS RD -ID , Drain Current ( A ) -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% TA , Ambient Temperature ( C ) 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com + - RG D.U.T. V DD 5 IRF7104PBF Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit 6 www.irf.com + QGS QGD D.U.T. - -10V VDS IRF7104PBF Peak Diode Recovery dv/dt Test Circuit D.U.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + V DD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 IRF7104PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 8 www.irf.com IRF7104PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 9 |
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